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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE18002 DESCRIPTION *With TO-220 package *High voltage ,high speed APPLICATIONS *Designed for use in 220V line-operated switchmode power supplies and electronic light ballast PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1000 450 9 2 5 0.5 1.0 100 150 -65~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C Rth j-A PARAMETER Thermal resistance junction to case Thermal resistance junction to ambient MAX 1.25 62.5 UNIT /W /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=0.1A; L=25mH IC=0.4A ;IB=40mA TC=125 IC=1A ;IB=0.2A TC=125 IC=0.4A ;IB=40mA IC=1A ;IB=0.2A VCES=RatedVCES; VEB=0 TC=125 VCES=800V ICEO IEBO hFE-1 hFE-2 hFE-3 hFE-4 fT COB Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain DC current gain Transition frequency Collector outoput capacitance VCE=RatedVCEO; IB=0 VEB=9V; IC=0 IC=0.2A ; VCE=5V IC=0.4A ; VCE=1V IC=1A ; VCE=1V IC=10mA ; VCE=5V IC=0.5A ; VCE=10V;f=1.0MHz IE=0 ; VCB=10V;f=1.0MHz 14 11 6 10 MIN 450 SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 MJE18002 TYP. MAX UNIT V 0.5 0.5 0.5 0.6 1.1 1.25 0.1 0.5 0.1 0.1 0.1 34 V V V V ICES Collector cut-off current mA mA mA 6.5 35 MHz pF Switching times resistive load,Duty CycleB10%,Pulse Width=20s ton toff ton toff Turn-on time Turn-off time Turn-on time Turn-off time VCC=300V ,IC=0.4A IB1=40mA; IB2=0.2A 200 1.2 85 1.7 300 2.5 150 2.5 ns s ns s VCC=300V ,IC=1.0A IB1=0.2A; IB2=0.5A 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJE18002 Fig.2 Outline dimensions (unindicated tolerance:0.10mm) 3 |
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